SKU: MZ-V9S1T0BW
Vendor: Samsung

SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW

Name: SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW
Brand: Samsung
SKU: MZ-V9S1T0BW
Price: 69.0 KWD
Availability: InStock

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Product description

Specifications

Form Factor	M.2 (2280)
Capacity	1TB
Interface	PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0
Dimensions (WxHxD)	80.15 x 22.15 x 2.38 mm
Weight	Max 9.0g
Storage Memory	Samsung V-NAND TLC
Controller	Samsung in-house Controller
Cache Memory	HMB (Host Memory Buffer)
Performance
Sequential Read Speed	Up to 7,150 MB/s
Sequential Write Speed	Up to 6,300 MB/s
Random Read (4KB, QD32)	Up to 850,000 IOPS
Random Write (4KB, QD32)	Up to 1,350,000 IOPS
Environment
Average Power Consumption	Read 4.3W / Write 4.2W
Power Consumption (Idle)	Typical 60 mW
Power Consumption (Sleep)	Typical 5 mW
Allowable Voltage	3.3 V ± 5 %
Reliability (MTBF)	1.5 Million Hours
Operating Temperature	0 - 70 ℃
Shock	1,500 G & 0.5 ms (Half sine)
Special Features
TRIM Support	Supported
S.M.A.R.T Support	Supported
GC (Garbage Collection)	Auto Garbage Collection Algorithm
Encryption Support	AES 256-bit, TCG/Opal, IEEE1667
WWN Support	Not supported
Device Sleep Mode Support	Yes