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SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW
SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW
SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW
SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW
SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW
SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW
Samsung

SAMSUNG 1TB NVMe 990 EVO Plus Gen4/5 Upto 7150Mb/s-MZ-V9S1T0BW

Product SKU: MZ-V9S1T0BW
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  • Description

Specifications

Form Factor M.2 (2280)
Capacity 1TB
Interface PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0
Dimensions (WxHxD) 80.15 x 22.15 x 2.38 mm
Weight Max 9.0g
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory HMB (Host Memory Buffer)
Performance  
Sequential Read Speed Up to 7,150 MB/s
Sequential Write Speed Up to 6,300 MB/s
Random Read (4KB, QD32) Up to 850,000 IOPS
Random Write (4KB, QD32) Up to 1,350,000 IOPS
Environment  
Average Power Consumption Read 4.3W / Write 4.2W
Power Consumption (Idle) Typical 60 mW
Power Consumption (Sleep) Typical 5 mW
Allowable Voltage 3.3 V ± 5 %
Reliability (MTBF) 1.5 Million Hours
Operating Temperature 0 - 70 ℃
Shock 1,500 G & 0.5 ms (Half sine)
Special Features  
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit, TCG/Opal, IEEE1667
WWN Support Not supported
Device Sleep Mode Support Yes

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